Pure emitter dephasing : a resource for advanced solid-state single photon sources

We have computed the spectrum emitted spontaneously by a quantum dot coupled to an arbitrarily detuned single mode cavity, taking into account pure dephasing processes. We show that if the emitter is incoherent, the cavity can efficiently emit photons with its own spectral characteristics. This effect opens unique opportunities for the development of devices exploiting both cavity quantum electrodynamics effects and pure dephasing, such as wavelength stabilized single photon sources robust against spectral diffusion.Comment: 5 pages, 3 figure

Quantum Communication with Quantum Dot Spins

Single electron spins in quantum dots are attractive for quantum communication because of their expected long coherence times. We propose a method to create entanglement between two remote spins based on the coincident detection of two photons emitted by the dots. Local nodes of several qubits can be realized using the dipole-dipole interaction between trions in neighboring dots and spectral addressing, allowing the realization of quantum repeater protocols. We have performed a detailed feasibility study of our proposal based on tight-binding calculations of quantum dot properties.Comment: 4 pages, 2 figures, new and improved version, explicit performance estimate

Non-exponential spontaneous emission dynamics for emitters in a time-dependent optical cavity

We have theoretically studied the effect of deterministic temporal control of spontaneous emission in a dynamic optical microcavity. We propose a new paradigm in light emission: we envision an ensemble of two-level emitters in an environment where the local density of optical states is modified on a time scale shorter than the decay time. A rate equation model is developed for the excited state population of two-level emitters in a time-dependent environment in the weak coupling regime in quantum electrodynamics. As a realistic experimental system, we consider emitters in a semiconductor microcavity that is switched by free-carrier excitation. We demonstrate that a short temporal increase of the radiative decay rate depletes the excited state and drastically increases the emission intensity during the switch time. The resulting time-dependent spontaneous emission shows a distribution of photon arrival times that strongly deviates from the usual exponential decay: A deterministic burst of photons is spontaneously emitted during the switch event.Comment: 12 pages, 4 figure

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect

We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central $\lambda-$layer has a greater electronic bandgap; pumping with photon energies near the bandgap resonantly enhances the switched magnitude. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time that is set by the quality factor. We provide the settings for the essential parameters so that the frequency shift of the cavity resonance can be increased to one linewidth

Differential ultrafast all-optical switching of the resonances of a micropillar cavity

We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.Comment: 4 pages, 3 figure